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| BUZ 78 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 78 VDS 800 V ID 1.5 A RDS(on) 8 Package TO-220 AB Ordering Code C67078-S1318-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 1.5 Unit A ID IDpuls 6 TC = 25 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 1.5 5 mJ ID = 1.5 A, VDD = 50 V, RGS = 25 L = 142 mH, Tj = 25 C Gate source voltage Power dissipation 170 VGS Ptot 20 40 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 78 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 6.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 800 V, VGS = 0 V, Tj = 25 C VDS = 800 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 8 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1 A Semiconductor Group 2 07/96 BUZ 78 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1 1.35 320 40 20 - S pF 430 60 30 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 1.7 A RGS = 50 Rise time tr 40 60 VDD = 30 V, VGS = 10 V, ID = 1.7 A RGS = 50 Turn-off delay time td(off) 45 60 VDD = 30 V, VGS = 10 V, ID = 1.7 A RGS = 50 Fall time tf 25 35 VDD = 30 V, VGS = 10 V, ID = 1.7 A RGS = 50 Semiconductor Group 3 07/96 BUZ 78 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 0.95 370 2.1 1.5 6 V 1.45 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 3 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 78 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 1.6 45 W A Ptot 35 30 ID 1.2 1.0 25 0.8 20 0.6 15 0.4 10 5 0 0 0.2 0.0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 1 t = 21.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A 100 s ID 10 0 ZthJC 10 0 /I D =V DS 1 ms DS (on ) 10 -1 D = 0.50 10 ms R 0.20 0.10 10 -2 0.05 0.02 single pulse 0.01 10 -1 DC 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 78 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 3.4 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 26 Ptot = 40W l k ih g j f eV GS [V] a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 22 a b c d ID 2.8 2.4 RDS (on) 20 18 16 14 12 e c d d e f g 2.0 1.6 c h i j k 10 8 6 4 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 1.2 f g i k j h 0.8 b l 0.4 a 2 V 70 0 0.0 0.0 0 10 20 30 40 50 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 2.2 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 2.2 S ID 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 gfs 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 A 2.0 VGS ID Semiconductor Group 6 07/96 BUZ 78 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1 A, VGS = 10 V 32 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V RDS (on) VGS(th) 24 98% 4.0 3.6 3.2 typ 20 2.8 2.4 2.0 16 2% 12 98% typ 1.6 1.2 0.8 8 4 0 -60 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 1 nF C 10 0 A IF 10 0 Ciss 10 -1 10 -1 Tj = 25 C typ Coss Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 78 Avalanche energy EAS = (Tj ) parameter: ID = 1.5 A, VDD = 50 V RGS = 25 , L = 142 mH 180 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V EAS 140 120 VGS 12 10 100 8 80 6 60 40 20 0 20 4 0,2 VDS max 0,8 VDS max 2 0 40 60 80 100 120 C 160 0 10 20 30 40 nC 60 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 960 V 920 V(BR)DSS 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 78 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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